LPV358 双路、低压、低功耗 RRO

The LPV321/358/324 devices are low-power (9 µA per channel at 5 V) versions of the LMV321/358/324 operational amplifiers. These are additions to the LMV321/358/324 family of commodity operational amplifiers.

The LPV321/358/324 devices are the most cost-effective solutions for applications where low voltage, low-power operation, space saving, and low price are needed. These devices have rail-to-rail output-swing capability, and the input common-mode voltage range includes ground. They all exhibit excellent speed-power ratios, achieving 152 kHz of bandwidth, with a supply current of only 9 µA typical.

The LPV321, LPV358, and LPV324 are characterized for operation from –40°C to 85°C. The LPV321I, LPV358I, and LPV324I are characterized for operation from –40°C to 125°C


LPV358
Iq per channel(Max)(mA) 0.01  
VIO (25 deg C)(Max)(mV) 7  
CMRR(Min)(dB) 50  
Vn at 1kHz(Typ)(nV/rtHz) 146  
Rail-Rail Out  
IIB(Max)(pA) 50000  
Slew Rate(Typ)(V/us) 0.1  
GBW(Typ)(MHz) 0.237  
Spec'd at Vs(V) 5  
VIO (Full Range)(Max)(mV) 11  
Vs(Min)(V) 2.7  
Vs(Max)(V) 5.5  
Pin/Package 8MSOP, 8SOIC, 8VSSOP  
Vio(Max)(mV) 11  
Supply Voltage 5(V) Yes  
Offset Drift(Typ)(uV/C) 4  
IQ Per Amp (+/-)(Max)(mA) 0.01  
Offset Voltage (+/-)(Max)(mV) 7  
Number of Channels 2  
Approx. Price (US$) 0.33 | 1ku  
Operating Temperature Range(C) -40 to 125,-40 to 85  
Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) 2.7  
Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) 5.5
LPV358 特性
LPV358 芯片订购指南
器件 状态 温度 价格(美元) 封装 | 引脚 封装数量 | 封装载体 丝印标记
LPV358D ACTIVE -40 to 85 0.39 | 1ku SOIC (D) | 8 75 | TUBE  
LPV358DDUR ACTIVE -40 to 85 0.33 | 1ku VSSOP (DDU) | 8 3000 | LARGE T&R  
LPV358DDURE4 ACTIVE -40 to 85 0.33 | 1ku VSSOP (DDU) | 8 3000 | LARGE T&R  
LPV358DDURG4 ACTIVE -40 to 85 0.33 | 1ku VSSOP (DDU) | 8 3000 | LARGE T&R  
LPV358DE4 ACTIVE -40 to 85 0.39 | 1ku SOIC (D) | 8 75 | TUBE  
LPV358DG4 ACTIVE -40 to 85 0.39 | 1ku SOIC (D) | 8 75 | TUBE  
LPV358DGKR ACTIVE -40 to 85 0.33 | 1ku MSOP (DGK) | 8 2500 | LARGE T&R  
LPV358DGKRG4 ACTIVE -40 to 85 0.33 | 1ku MSOP (DGK) | 8 2500 | LARGE T&R  
LPV358DR ACTIVE -40 to 85 0.33 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
LPV358DRE4 ACTIVE -40 to 85 0.33 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
LPV358DRG4 ACTIVE -40 to 85 0.33 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
LPV358ID ACTIVE -40 to 125 0.39 | 1ku SOIC (D) | 8 75 | TUBE  
LPV358IDDUR ACTIVE -40 to 125 0.33 | 1ku VSSOP (DDU) | 8 3000 | LARGE T&R  
LPV358IDDURE4 ACTIVE -40 to 125 0.33 | 1ku VSSOP (DDU) | 8 3000 | LARGE T&R  
LPV358IDDURG4 ACTIVE -40 to 125 0.33 | 1ku VSSOP (DDU) | 8 3000 | LARGE T&R  
LPV358IDE4 ACTIVE -40 to 125 0.39 | 1ku SOIC (D) | 8 75 | TUBE  
LPV358IDG4 ACTIVE -40 to 125 0.39 | 1ku SOIC (D) | 8 75 | TUBE  
LPV358IDGKR ACTIVE -40 to 125 0.33 | 1ku MSOP (DGK) | 8 2500 | LARGE T&R  
LPV358IDGKRG4 ACTIVE -40 to 125 0.33 | 1ku MSOP (DGK) | 8 2500 | LARGE T&R  
LPV358IDR ACTIVE -40 to 125 0.33 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
LPV358IDRE4 ACTIVE -40 to 125 0.33 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
LPV358IDRG4 ACTIVE -40 to 125 0.33 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
LPV358 质量与无铅数据
器件 环保计划* 铅/焊球涂层 MSL 等级/回流焊峰 环保信息与无铅 (Pb-free) DPPM / MTBF / FIT 率
LPV358D Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358D LPV358D
LPV358DDUR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358DDUR LPV358DDUR
LPV358DDURE4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358DDURE4 LPV358DDURE4
LPV358DDURG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358DDURG4 LPV358DDURG4
LPV358DE4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358DE4 LPV358DE4
LPV358DG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358DG4 LPV358DG4
LPV358DGKR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358DGKR LPV358DGKR
LPV358DGKRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358DGKRG4 LPV358DGKRG4
LPV358DR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358DR LPV358DR
LPV358DRE4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358DRE4 LPV358DRE4
LPV358DRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358DRG4 LPV358DRG4
LPV358ID Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358ID LPV358ID
LPV358IDDUR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358IDDUR LPV358IDDUR
LPV358IDDURE4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358IDDURE4 LPV358IDDURE4
LPV358IDDURG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358IDDURG4 LPV358IDDURG4
LPV358IDE4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358IDE4 LPV358IDE4
LPV358IDG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358IDG4 LPV358IDG4
LPV358IDGKR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358IDGKR LPV358IDGKR
LPV358IDGKRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358IDGKRG4 LPV358IDGKRG4
LPV358IDR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358IDR LPV358IDR
LPV358IDRE4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358IDRE4 LPV358IDRE4
LPV358IDRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LPV358IDRG4 LPV358IDRG4
LPV358 应用技术支持与电子电路设计开发资源下载
  1. LPV358 数据资料 dataSheet 下载.PDF
  2. TI 德州仪标准线性放大器产品选型与价格 . xls
  3. 所选封装材料的热学和电学性质 (PDF 645 KB)
  4. 高速数据转换 (PDF 1967 KB)
  5. 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
  6. PowerPAD™ Thermally Enhanced Package (slma002g.HTM, 8 KB)
  7. 运算放大器的单电源操作 (PDF 2174 KB)
  8. Tuning in Amplifiers (PDF 44 KB)
  9. Op Amp Performance Analysis (PDF 76 KB)
  10. An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
  11. Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
  12. Operational Amplifier Macromodels: A Comparison (PDF 59 KB)