TLC084 四路宽带高输出驱动单电源运算放大器

The first members of TI’s new BiMOS general-purpose operational amplifier family are the TLC08x. The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher ac and dc performance. With performance rated from 4.5 V to 16 V across commercial (0°C to 70°C) and an extended industrial temperature range (–40°C to 125°C), BiMOS suits a wide range of audio, automotive, industrial, and instrumentation applications. Familiar features like offset nulling pins, and new features like MSOP PowerPAD™ packages and shutdown modes, enable higher levels of performance in a variety of applications.

Developed in TI‘s patented LBC3 BiCMOS process, the new BiMOS amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both


TLC080 TLC081 TLC082 TLC083 TLC084 TLC085
Number of Channels 1   1   2   2   4   4  
Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) 4.5   4.5   4.5   4.5   4.5   4.5  
Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) 16   16   16   16   16   16  
Iq per channel(Max)(mA) 2.5   2.5   2.5   2.5   2.5   2.5  
GBW(Typ)(MHz) 10   10   10   10   10   10  
Slew Rate(Typ)(V/us) 16   16   16   16   16   16  
VIO (25 deg C)(Max)(mV) 1.9   1.9   1.9   1.9   1.9   1.9  
Offset Drift(Typ)(uV/C) 1.2   1.2   1.2   1.2   1.2   1.2  
IIB(Max)(pA) 50   50   50   50   50   50  
CMRR(Min)(dB) 100   80   80   80   80   80  
Vn at 1kHz(Typ)(nV/rtHz) 8.5   8.5   8.5   8.5   8.5   8.5  
Rating Catalog   Catalog   Catalog   Catalog   Catalog   Catalog  
Pin/Package 8MSOP-PowerPAD, 8PDIP, 8SOIC   8MSOP-PowerPAD, 8PDIP, 8SOIC   8MSOP-PowerPAD, 8PDIP, 8SOIC   10MSOP-PowerPAD, 14PDIP, 14SOIC   14PDIP, 14SOIC, 20HTSSOP   16PDIP, 16SOIC, 20HTSSOP  
Operating Temperature Range(C) -40 to 125,0 to 70   -40 to 125,0 to 70   -40 to 125,0 to 70   -40 to 125,0 to 70   -40 to 125,0 to 70   0 to 70  
Approx. Price (US$) 0.65 | 1ku   0.45 | 1ku   0.70 | 1ku   0.95 | 1ku   0.95 | 1ku   1.30 | 1ku
TLC084 特性
TLC084 芯片订购指南
器件 状态 温度 价格（美元） 封装 | 引脚 封装数量 | 封装载体 丝印标记
TLC084CD ACTIVE 0 to 70 1.15 | 1ku SOIC (D) | 14 50 | TUBE  
TLC084CDG4 ACTIVE 0 to 70 1.15 | 1ku SOIC (D) | 14 50 | TUBE  
TLC084CDR ACTIVE 0 to 70 0.95 | 1ku SOIC (D) | 14 2500 | LARGE T&R  
TLC084CDRG4 ACTIVE 0 to 70 0.95 | 1ku SOIC (D) | 14 2500 | LARGE T&R  
TLC084CN ACTIVE 0 to 70 0.95 | 1ku PDIP (N) | 14 25 | TUBE  
TLC084CNE4 ACTIVE 0 to 70 0.95 | 1ku PDIP (N) | 14 25 | TUBE  
TLC084CPWP ACTIVE 0 to 70 1.20 | 1ku HTSSOP (PWP) | 20 70 | TUBE  
TLC084CPWPG4 ACTIVE 0 to 70 1.20 | 1ku HTSSOP (PWP) | 20 70 | TUBE  
TLC084CPWPR ACTIVE 0 to 70 1.00 | 1ku HTSSOP (PWP) | 20 2000 | LARGE T&R  
TLC084CPWPRG4 ACTIVE 0 to 70 1.00 | 1ku HTSSOP (PWP) | 20 2000 | LARGE T&R  
TLC084ID ACTIVE -40 to 125 1.20 | 1ku SOIC (D) | 14 50 | TUBE  
TLC084IDG4 ACTIVE -40 to 125 1.20 | 1ku SOIC (D) | 14 50 | TUBE  
TLC084IDR ACTIVE -40 to 125 1.00 | 1ku SOIC (D) | 14 2500 | LARGE T&R  
TLC084IDRG4 ACTIVE -40 to 125 1.00 | 1ku SOIC (D) | 14 2500 | LARGE T&R  
TLC084IPWP ACTIVE -40 to 125 1.25 | 1ku HTSSOP (PWP) | 20 70 | TUBE  
TLC084IPWPG4 ACTIVE -40 to 125 1.25 | 1ku HTSSOP (PWP) | 20 70 | TUBE  
TLC084IPWPR ACTIVE -40 to 125 1.05 | 1ku HTSSOP (PWP) | 20 2000 | LARGE T&R  
TLC084IPWPRG4 ACTIVE -40 to 125 1.05 | 1ku HTSSOP (PWP) | 20 2000 | LARGE T&R  
TLC084 质量与无铅数据
器件 环保计划* 铅/焊球涂层 MSL 等级/回流焊峰 环保信息与无铅 (Pb-free) DPPM / MTBF / FIT 率
TLC084CD Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC084CD TLC084CD
TLC084CDG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC084CDG4 TLC084CDG4
TLC084CDR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC084CDR TLC084CDR
TLC084CDRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC084CDRG4 TLC084CDRG4
TLC084CN Pb-Free (RoHS)  CU NIPDAU  N/A for Pkg Type TLC084CN TLC084CN
TLC084CNE4 Pb-Free (RoHS)  CU NIPDAU  N/A for Pkg Type TLC084CNE4 TLC084CNE4
TLC084CPWP Green (RoHS & no Sb/Br)  CU NIPDAU  Level-2-260C-1 YEAR TLC084CPWP TLC084CPWP
TLC084CPWPG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-2-260C-1 YEAR TLC084CPWPG4 TLC084CPWPG4
TLC084CPWPR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-2-260C-1 YEAR TLC084CPWPR TLC084CPWPR
TLC084CPWPRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-2-260C-1 YEAR TLC084CPWPRG4 TLC084CPWPRG4
TLC084ID Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC084ID TLC084ID
TLC084IDG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC084IDG4 TLC084IDG4
TLC084IDR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC084IDR TLC084IDR
TLC084IDRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC084IDRG4 TLC084IDRG4
TLC084IPWP Green (RoHS & no Sb/Br)  CU NIPDAU  Level-2-260C-1 YEAR TLC084IPWP TLC084IPWP
TLC084IPWPG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-2-260C-1 YEAR TLC084IPWPG4 TLC084IPWPG4
TLC084IPWPR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-2-260C-1 YEAR TLC084IPWPR TLC084IPWPR
TLC084IPWPRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-2-260C-1 YEAR TLC084IPWPRG4 TLC084IPWPRG4
TLC084 应用技术支持与电子电路设计开发资源下载
  1. TLC084 数据资料 dataSheet 下载.PDF
  2. TI 德州仪器仪运算放大器 (Op Amp)产品选型与价格 . xls
  3. 所选封装材料的热学和电学性质 (PDF 645 KB)
  4. 高速数据转换 (PDF 1967 KB)
  5. 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
  6. PowerPAD™ Thermally Enhanced Package (slma002g.HTM, 8 KB)
  7. 运算放大器的单电源操作 (PDF 2174 KB)
  8. Tuning in Amplifiers (PDF 44 KB)
  9. Op Amp Performance Analysis (PDF 76 KB)
  10. An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
  11. Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
  12. Operational Amplifier Macromodels: A Comparison (PDF 59 KB)
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