TLC271A 可编程低功耗运算放大器
The TLC271 operational amplifier combines a wide range of input offset voltage grades with low offset voltage drift and high input impedance. In addition, the TLC271 offers a bias-select mode that allows the user to select the best combination of power dissipation and ac performance for a particular application. These devices use Texas Instruments silicon-gate LinCMOSTM technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.
Using the bias-select option, these cost-effective devices can be programmed to span a wide range of applications that previously required BiFET, NFET, or bipolar technology. Three offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC271 (10 mV) to the TLC271B (2 mV) low-offset version
|
TLC271A |
Iq per channel(Max)(mA) |
1.6 |
VIO (25 deg C)(Max)(mV) |
5 |
CMRR(Min)(dB) |
65 |
Vn at 1kHz(Typ)(nV/rtHz) |
25 |
IIB(Max)(pA) |
60 |
Slew Rate(Typ)(V/us) |
3.6 |
GBW(Typ)(MHz) |
1.7 |
Spec'd at Vs(V) |
5 |
VIO (Full Range)(Max)(mV) |
6.5 |
Vs(Min)(V) |
3 |
Vs(Max)(V) |
16 |
Pin/Package |
8PDIP,8SOIC |
Open Loop Gain(Min)(dB) |
74 |
Offset Drift(Typ)(uV/C) |
1.8 |
Number of Channels |
1 |
Approx. Price (US$) |
0.31 | 1ku |
Operating Temperature Range(C) |
-40 to 85,0 to 70 |
Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) |
3 |
Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) |
16 |
TLC271A 特性
- Input Offset Voltage Drift...Typically
0.1 uV/Month, Including the First 30 Days
- Wide Range of Supply Voltages Over Specified Temperature Range:
- 0°C to 70°C...3 V to 16 V
- -40°C to 85°C...4 V to 16 V
- -55°C to 125°C...5 V to 16 V
- Single-Supply Operation
- Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix and I-Suffix Types)
- Low Noise...25 nV/Hz\ Typically at
f = 1 kHz (High-Bias Mode)
- Output Voltage Range Includes Negative Rail
- High Input Impedance...1012 Typ
- ESD-Protection Circuitry
- Small-Outline Package Option Also Available in Tape and Reel
- Designed-In Latch-Up Immunity
TLC271A 芯片订购指南
器件 |
状态 |
温度 |
价格(美元) |
封装 | 引脚 |
封装数量 | 封装载体 |
丝印标记 |
TLC271ACD |
ACTIVE |
0 to 70 |
0.35 | 1ku |
SOIC (D) | 8 |
75 | TUBE |
|
TLC271ACDG4 |
ACTIVE |
0 to 70 |
0.35 | 1ku |
SOIC (D) | 8 |
75 | TUBE |
|
TLC271ACDR |
ACTIVE |
0 to 70 |
0.29 | 1ku |
SOIC (D) | 8 |
2500 | LARGE T&R |
|
TLC271ACDRG4 |
ACTIVE |
0 to 70 |
0.29 | 1ku |
SOIC (D) | 8 |
2500 | LARGE T&R |
|
TLC271ACP |
ACTIVE |
0 to 70 |
0.29 | 1ku |
PDIP (P) | 8 |
50 | TUBE |
|
TLC271ACPE4 |
ACTIVE |
0 to 70 |
0.29 | 1ku |
PDIP (P) | 8 |
50 | TUBE |
|
TLC271A 质量与无铅数据
器件 |
环保计划* |
铅/焊球涂层 |
MSL 等级/回流焊峰 |
环保信息与无铅 (Pb-free) |
DPPM / MTBF / FIT 率 |
TLC271ACD |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLC271ACD |
TLC271ACD |
TLC271ACDG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLC271ACDG4 |
TLC271ACDG4 |
TLC271ACDR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLC271ACDR |
TLC271ACDR |
TLC271ACDRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLC271ACDRG4 |
TLC271ACDRG4 |
TLC271ACP |
Pb-Free (RoHS) |
CU NIPDAU |
N/A for Pkg Type |
TLC271ACP |
TLC271ACP |
TLC271ACPE4 |
Pb-Free (RoHS) |
CU NIPDAU |
N/A for Pkg Type |
TLC271ACPE4 |
TLC271ACPE4 |
TLC271A 应用技术支持与电子电路设计开发资源下载
- TLC271A 数据资料 dataSheet 下载.PDF
- TI 德州仪标准线性放大器产品选型与价格 . xls
- 所选封装材料的热学和电学性质 (PDF 645 KB)
- 高速数据转换 (PDF 1967 KB)
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- PowerPAD™ Thermally Enhanced Package (slma002g.HTM, 8 KB)
- 运算放大器的单电源操作 (PDF 2174 KB)
- Tuning in Amplifiers (PDF 44 KB)
- Op Amp Performance Analysis (PDF 76 KB)
- An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
- Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
- Operational Amplifier Macromodels: A Comparison (PDF 59 KB)