The TLC27L2 and TLC27L7 dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, extremely low power, and high gain.
These devices use Texas Instruments silicon-gate LinCMOS™ technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.
The extremely high input impedance, low bias currents, and low power consumption make these cost-effective devices ideal for high gain, low frequency, low power applications. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27L2 (10 mV) to the high-precision TLC27L7 (500 µV).
TLC27L2M | |
Pin/Package | 8SOIC |
Approx. Price (US$) | 0.43 | 1ku |
Operating Temperature Range(C) | -55 to 125 |
器件 | 状态 | 温度 | 价格(美元) | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
TLC27L2MD | ACTIVE | -55 to 125 | 0.43 | 1ku | SOIC (D) | 8 | 75 | |
TLC27L2MDG4 | ACTIVE | 0.43 | 1ku | SOIC (D) | 8 | 75 | ||
TLC27L2MDR | ACTIVE | -55 to 125 | 0.43 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
TLC27L2MDRG4 | ACTIVE | -55 to 125 | 0.43 | 1ku | SOIC (D) | 8 | 2500 |
器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
TLC27L2MD | TBD | CU NIPDAU | Level-1-260C-UNLIM | TLC27L2MD | TLC27L2MD |
TLC27L2MDG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L2MDG4 | TLC27L2MDG4 |
TLC27L2MDR | TBD | CU NIPDAU | Level-1-260C-UNLIM | TLC27L2MDR | TLC27L2MDR |
TLC27L2MDRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L2MDRG4 | TLC27L2MDRG4 |