TLC27M4B LinCMOS(TM) 精密四路运算放大器
The TLC27M2 and TLC27M7 dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching that of general-purpose bipolar devices.These devices use Texas Instruments silicon-gate LinCMOS technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.
The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices ideal for applications which have previously been reserved for general-purpose bipolar products, but with only a fraction of the power consumption. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27M2 (10 mV) to the high-precision TLC27M7 (500 µV).
|
TLC27M4B |
Iq per channel(Max)(mA) |
0.28 |
VIO (25 deg C)(Max)(mV) |
2 |
CMRR(Min)(dB) |
65 |
Vn at 1kHz(Typ)(nV/rtHz) |
32 |
IIB(Max)(pA) |
600 |
Slew Rate(Typ)(V/us) |
0.43 |
GBW(Typ)(MHz) |
0.525 |
Spec'd at Vs(V) |
5 |
VIO (Full Range)(Max)(mV) |
3 |
Vs(Min)(V) |
3 |
Vs(Max)(V) |
16 |
Pin/Package |
14PDIP, 14SOIC |
Open Loop Gain(Min)(dB) |
88 |
Offset Drift(Typ)(uV/C) |
1.7 |
Number of Channels |
4 |
Approx. Price (US$) |
0.55 | 1ku |
Operating Temperature Range(C) |
-40 to 85,0 to 70 |
Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) |
3 |
Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) |
16 |
TLC27M4B 特性
- Trimmed Offset Voltage:
- TLC27M7...500 µV Max at 25°C,
VDD = 5 V
- Input Offset Voltage Drift...Typically
0.1 µV/Month, Including the First 30 Days
- Wide Range of Supply Voltages Over
Specified Temperature Ranges:
- 0°C to 70°C...3 V to 16 V
- –40°C to 85°C...4 V to 16 V
- –55°C to 125°C...4 V to 16 V
- Single-Supply Operation
- Common-Mode Input Voltage Range Extends Below
the Negative Rail (C-Suffix, I-Suffix Types)
- Low Noise...Typically 32 nV/ Hz at f = 1 kHz
- Low Power...Typically 2.1 mW at 25°C, VDD = 5 V
- Output Voltage Range Includes Negative Rail
- High Input impedance...1012 Typ
- ESD-Protection Circuitry
- Small-Outline Package Option Also Available in Tape and Reel
- Designed-In Latch-Up Immunity
TLC27M4B 芯片订购指南
器件 |
状态 |
温度 |
价格(美元) |
封装 | 引脚 |
封装数量 | 封装载体 |
丝印标记 |
TLC27M4BCD |
ACTIVE |
0 to 70 |
0.65 | 1ku |
SOIC (D) | 8 |
75 | TUBE |
|
TLC27M4BCDG4 |
ACTIVE |
0 to 70 |
0.65 | 1ku |
SOIC (D) | 8 |
75 | TUBE |
|
TLC27M4BCDR |
ACTIVE |
0 to 70 |
0.55 | 1ku |
SOIC (D) | 8 |
2500 | LARGE T&R |
|
TLC27M4BCDRG4 |
ACTIVE |
0 to 70 |
0.55 | 1ku |
SOIC (D) | 8 |
2500 | LARGE T&R |
|
TLC27M4BCN |
ACTIVE |
0 to 70 |
0.55 | 1ku |
PDIP (P) | 8 |
50 | TUBE |
|
TLC27M4BCNE4 |
ACTIVE |
0 to 70 |
0.55 | 1ku |
PDIP (P) | 8 |
50 | TUBE |
|
TLC27M4B 质量与无铅数据
器件 |
环保计划* |
铅/焊球涂层 |
MSL 等级/回流焊峰 |
环保信息与无铅 (Pb-free) |
DPPM / MTBF / FIT 率 |
TLC27M4BCD |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLC27M4BCD |
TLC27M4BCD |
TLC27M4BCDG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLC27M4BCDG4 |
TLC27M4BCDG4 |
TLC27M4BCDR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLC27M4BCDR |
TLC27M4BCDR |
TLC27M4BCDRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLC27M4BCDRG4 |
TLC27M4BCDRG4 |
TLC27M4BCP |
Pb-Free (RoHS) |
CU NIPDAU |
N/A for Pkg Type |
TLC27M4BCP |
TLC27M4BCP |
TLC27M4BCPE4 |
Pb-Free (RoHS) |
CU NIPDAU |
N/A for Pkg Type |
TLC27M4BCPE4 |
TLC27M4BCPE4 |
TLC27M4B 应用技术支持与电子电路设计开发资源下载
- TLC27M4B 数据资料 dataSheet 下载.PDF
- TI 德州仪标准线性放大器产品选型与价格 . xls
- 所选封装材料的热学和电学性质 (PDF 645 KB)
- 高速数据转换 (PDF 1967 KB)
- 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
- PowerPAD™ Thermally Enhanced Package (slma002g.HTM, 8 KB)
- 运算放大器的单电源操作 (PDF 2174 KB)
- Tuning in Amplifiers (PDF 44 KB)
- Op Amp Performance Analysis (PDF 76 KB)
- An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
- Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
- Operational Amplifier Macromodels: A Comparison (PDF 59 KB)