TLE2021-EP 增强型产品精密低功耗单电源运算放大器
The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly improved slew rate and unity-gain bandwidth.
The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.
The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. This means that a precision device remains a precision device even with changes in temperature and over years of use.
This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices the ideal choice for low-level signal conditioning applications in either single-supply or split-supply configurations
| TLE2021-EP | |
| Number of Channels | 1 |
| Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) | 4 |
| Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) | 40 |
| Iq per channel(Max)(mA) | 0.3 |
| GBW(Typ)(MHz) | 1.2 |
| Slew Rate(Typ)(V/us) | 0.5 |
| VIO (25 deg C)(Max)(mV) | 0.6 |
| Offset Drift(Typ)(uV/C) | 2 |
| IIB(Max)(pA) | 70000 |
| CMRR(Min)(dB) | 85 |
| Vn at 1kHz(Typ)(nV/rtHz) | 17 |
| Rating | HiRel Enhanced Product |
| Pin/Package | 8SOIC |
| Operating Temperature Range(C) | -40 to 125,-55 to 125 |
TLE2021-EP 特性
- Controlled Baseline
- One Assembly/Test Site, One Fabrication Site
- Extended Temperature Performance of –40°C to 125°C
- Also Available in –55°C to 125°C
- Enhanced Diminishing Manufacturing Sources (DMS) Support
- Enhanced Product-Change Notification
- Qualification Pedigree(1)
- Supply Current . . . 300 µA Max
- High Unity-Gain Bandwidth . . . 2 MHz Typ
- High Slew Rate . . . 0.45 V/µs Min
- Supply-Current Change Over Full Temp Range . . . 10 µA Typ at VCC± = ±15 V
- Specified for Both 5-V Single-Supply and ±15-V Operation
- Phase-Reversal Protection
- High Open-Loop Gain . . . 6.5 V/µV (136 dB) Typ
- Low Offset Voltage . . . 100 µV Max
- Offset Voltage Drift With Time 0.005 µV/mo Typ
- Low Input Bias Current . . . 50 nA Max
- Low Noise Voltage . . . 19 nV/
Hz Typ
TLE2021-EP 芯片订购指南
| 器件 | 状态 | 温度 | 价格（美元） | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
| TLE2021MDREP | ACTIVE | -55 to 125 | 0.85 | 100u | SOIC (D) | 8 | 2500 | LARGE T&R | |
| TLE2021QDREP | ACTIVE | -40 to 125 | 0.85 | 100u | SOIC (D) | 8 | 2500 | LARGE T&R | |
| V62/04755-02XE | ACTIVE | -40 to 125 | 0.85 | 100u | SOIC (D) | 8 | 2500 | LARGE T&R | |
| V62/04755-07XE | ACTIVE | -55 to 125 | 0.85 | 100u | SOIC (D) | 8 | 2500 | LARGE T&R |
TLE2021-EP 质量与无铅数据
| 器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
| TLE2021MDREP | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLE2021MDREP | TLE2021MDREP |
| TLE2021QDREP | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLE2021QDREP | TLE2021QDREP |
| V62/04755-02XE | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | V62/04755-02XE | V62/04755-02XE |
| V62/04755-07XE | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | V62/04755-07XE | V62/04755-07XE |
TLE2021-EP 应用技术支持与电子电路设计开发资源下载
- TLE2021-EP 数据资料 dataSheet 下载.PDF
- TI 德州仪器仪运算放大器 (Op Amp)产品选型与价格 . xls
- 所选封装材料的热学和电学性质 (PDF 645 KB)
- 高速数据转换 (PDF 1967 KB)
- 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
- PowerPAD™ Thermally Enhanced Package (slma002g.HTM, 8 KB)
- 运算放大器的单电源操作 (PDF 2174 KB)
- Tuning in Amplifiers (PDF 44 KB)
- Op Amp Performance Analysis (PDF 76 KB)
- An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
- Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
- Operational Amplifier Macromodels: A Comparison (PDF 59 KB)
