TLE2022M 高速低功耗精密双路运算放大器

The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly improved slew rate and unity-gain bandwidth.

The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.

The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. This means that a precision device remains a precision device even with changes in temperature and over years of use.

This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices the ideal choice for low-level signal conditioning applications in either single-supply or split-supply configurations

	TLE2022M
Number of Channels	2
Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10)	4
Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10)	40
Iq per channel(Max)(mA)	0.3
GBW(Typ)(MHz)	1.7
Slew Rate(Typ)(V/us)	0.5
VIO (25 deg C)(Max)(mV)	0.6
Offset Drift(Typ)(uV/C)	2
IIB(Max)(pA)	70000
CMRR(Min)(dB)	85
Vn at 1kHz(Typ)(nV/rtHz)	17
Rating	Military
Pin/Package	20LCCC, 8CDIP, 8SOIC
Operating Temperature Range(C)	-55 to 125
Approx. Price (US$)	0.95 \| 1ku

TLE2022M 特性

Supply Current . . . 300 µA Max
High Unity-Gain Bandwidth . . . 2 MHz Typ
High Slew Rate . . . 0.45 V/µs Min
Supply-Current Change Over Military Temp
Range . . . 10 µA Typ at VCC ± = ± 15 V
Specified for Both 5-V Single-Supply and ±15-V Operation
Phase-Reversal Protection
High Open-Loop Gain . . . 6.5 V/µV (136 dB) Typ
Low Offset Voltage . . . 100 µV Max
Offset Voltage Drift With Time
0.005 µV/mo Typ
Low Input Bias Current . . . 50 nA Max
Low Noise Voltage . . . 19 nV/√Hz Typ

TLE2022M 芯片订购指南

器件	状态	温度	价格（美元）	封装 \| 引脚	封装数量 \| 封装载体	丝印标记
5962-9088102M2A	ACTIVE	-55 to 125	18.86 \| 1ku	LCCC (FK) \| 20	1 \| TUBE
5962-9088102MPA	ACTIVE	-55 to 125	10.91 \| 1ku	CDIP (JG) \| 8	1 \| TUBE
TLE2022MD	ACTIVE	-55 to 125	0.95 \| 1ku	SOIC (D) \| 8	75
TLE2022MDG4	ACTIVE		0.95 \| 1ku	SOIC (D) \| 8	75
TLE2022MDR	ACTIVE	-55 to 125	0.95 \| 1ku	SOIC (D) \| 8	2500 \| LARGE T&R
TLE2022MDRG4	ACTIVE		0.95 \| 1ku	SOIC (D) \| 8	2500
TLE2022MFKB	ACTIVE	-55 to 125	18.86 \| 1ku	LCCC (FK) \| 20	1 \| TUBE
TLE2022MJG	ACTIVE	-55 to 125	9.27 \| 1ku	CDIP (JG) \| 8	1 \| TUBE
TLE2022MJGB	ACTIVE	-55 to 125	10.91 \| 1ku	CDIP (JG) \| 8	1 \| TUBE

TLE2022M 质量与无铅数据

器件	环保计划*	铅/焊球涂层	MSL 等级/回流焊峰	环保信息与无铅 (Pb-free)	DPPM / MTBF / FIT 率
5962-9088102M2A	TBD	POST-PLATE	N/A for Pkg Type	5962-9088102M2A	5962-9088102M2A
5962-9088102MPA	TBD	A42	N/A for Pkg Type	5962-9088102MPA	5962-9088102MPA
TLE2022MD	TBD	CU NIPDAU	Level-1-220C-UNLIM	TLE2022MD	TLE2022MD
TLE2022MDG4	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	TLE2022MDG4	TLE2022MDG4
TLE2022MDR	TBD	CU NIPDAU	Level-1-220C-UNLIM	TLE2022MDR	TLE2022MDR
TLE2022MDRG4	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	TLE2022MDRG4	TLE2022MDRG4
TLE2022MFKB	TBD	POST-PLATE	N/A for Pkg Type	TLE2022MFKB	TLE2022MFKB
TLE2022MJG	TBD	A42	N/A for Pkg Type	TLE2022MJG	TLE2022MJG
TLE2022MJGB	TBD	A42	N/A for Pkg Type	TLE2022MJGB	TLE2022MJGB

TLE2022M 应用技术支持与电子电路设计开发资源下载

TLE2022M 数据资料 dataSheet 下载.PDF
TI 德州仪器仪运算放大器 (Op Amp)产品选型与价格 . xls
所选封装材料的热学和电学性质 (PDF 645 KB)
高速数据转换 (PDF 1967 KB)
在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
PowerPAD™ Thermally Enhanced Package (slma002g.HTM, 8 KB)
运算放大器的单电源操作 (PDF 2174 KB)
Tuning in Amplifiers (PDF 44 KB)
Op Amp Performance Analysis (PDF 76 KB)
An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
Operational Amplifier Macromodels: A Comparison (PDF 59 KB)