TLE2062AM JFET 输入低功耗高驱动二路运算放大器
The TLE206x series of low-power JFET-input operational amplifiers doubles the bandwidth of the earlier generation TL06x and TL03x BiFET families without significantly increasing power consumption. Texas Instruments Excalibur process also delivers a lower noise floor than the TL06x and TL03x. On-chip zener trimming of offset voltage yields precision grades for dc-coupled applications. The TL206x devices are pin-compatible with other TI BiFETs; they can be used to double the bandwidth of TL06x and TL03x circuits, or to reduce power consumption of TL05x, TL07x, and TL08x circuits by nearly 90%.
BiFET operational amplifiers offer the inherently-higher input impedance of the JFET-input transistors, without sacrificing the output drive associated with bipolar amplifiers
|
TLE2062AM |
| Number of Channels |
2 |
| Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) |
7 |
| Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) |
36 |
| Iq per channel(Max)(mA) |
0.354 |
| GBW(Typ)(MHz) |
1.8 |
| Slew Rate(Typ)(V/us) |
3.4 |
| VIO (25 deg C)(Max)(mV) |
2 |
| Offset Drift(Typ)(uV/C) |
6 |
| IIB(Max)(pA) |
40000 |
| CMRR(Min)(dB) |
65 |
| Vn at 1kHz(Typ)(nV/rtHz) |
43 |
| Pin/Package |
10CFP, 20LCCC, 8CDIP, 8SOIC |
| Rating |
Military |
| Operating Temperature Range(C) |
-55 to 125 |
| Approx. Price (US$) |
1.75 | 1ku |
TLE2062AM 特性
- 2× Bandwidth (2 MHz) of the TL06x and TL03x Operational Amplifiers
- Low Supply Current ... 290 µA/Ch Typ
- On-chip Offset Voltage Trimming for Improved DC Performance
- High Output Drive, Specified into 100-
Loads
- Lower Noise Floor Than Earlier Generations of Low-Power BiFETs
TLE2062AM 芯片订购指南
| 器件 |
状态 |
温度 |
价格（美元） |
封装 | 引脚 |
封装数量 | 封装载体 |
丝印标记 |
| 5962-9080802Q2A |
ACTIVE |
-55 to 125 |
11.13 | 1ku |
LCCC (FK) | 20 |
1 | TUBE |
|
| 5962-9080802QHA |
ACTIVE |
-55 to 125 |
10.34 | 1ku |
CFP (U) | 10 |
1 | TUBE |
|
| 5962-9080802QPA |
ACTIVE |
-55 to 125 |
5.59 | 1ku |
CDIP (JG) | 8 |
1 | TUBE |
|
| TLE2062AMD |
ACTIVE |
-55 to 125 |
1.75 | 1ku |
SOIC (D) | 8 |
75 |
|
| TLE2062AMDG4 |
ACTIVE |
|
1.75 | 1ku |
SOIC (D) | 8 |
75 |
|
| TLE2062AMFKB |
ACTIVE |
-55 to 125 |
11.13 | 1ku |
LCCC (FK) | 20 |
1 | TUBE |
|
| TLE2062AMJG |
ACTIVE |
-55 to 125 |
4.66 | 1ku |
CDIP (JG) | 8 |
1 | TUBE |
|
| TLE2062AMJGB |
ACTIVE |
-55 to 125 |
5.59 | 1ku |
CDIP (JG) | 8 |
1 | TUBE |
|
| TLE2062AMUB |
ACTIVE |
-55 to 125 |
10.34 | 1ku |
CFP (U) | 10 |
1 | TUBE |
|
TLE2062AM 质量与无铅数据
| 器件 |
环保计划* |
铅/焊球涂层 |
MSL 等级/回流焊峰 |
环保信息与无铅 (Pb-free) |
DPPM / MTBF / FIT 率 |
| 5962-9080802Q2A |
TBD |
POST-PLATE |
N/A for Pkg Type |
5962-9080802Q2A |
5962-9080802Q2A |
| 5962-9080802QHA |
TBD |
A42 |
N/A for Pkg Type |
5962-9080802QHA |
5962-9080802QHA |
| 5962-9080802QPA |
TBD |
A42 |
N/A for Pkg Type |
5962-9080802QPA |
5962-9080802QPA |
| TLE2062AMD |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLE2062AMD |
TLE2062AMD |
| TLE2062AMDG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLE2062AMDG4 |
TLE2062AMDG4 |
| TLE2062AMFKB |
TBD |
POST-PLATE |
N/A for Pkg Type |
TLE2062AMFKB |
TLE2062AMFKB |
| TLE2062AMJG |
TBD |
A42 |
N/A for Pkg Type |
TLE2062AMJG |
TLE2062AMJG |
| TLE2062AMJGB |
TBD |
A42 |
N/A for Pkg Type |
TLE2062AMJGB |
TLE2062AMJGB |
| TLE2062AMUB |
TBD |
A42 |
N/A for Pkg Type |
TLE2062AMUB |
TLE2062AMUB |
TLE2062AM 应用技术支持与电子电路设计开发资源下载
- TLE2062AM 数据资料 dataSheet 下载.PDF
- TI 德州仪器仪运算放大器 (Op Amp)产品选型与价格 . xls
- 所选封装材料的热学和电学性质 (PDF 645 KB)
- 高速数据转换 (PDF 1967 KB)
- 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
- PowerPAD™ Thermally Enhanced Package (slma002g.HTM, 8 KB)
- 运算放大器的单电源操作 (PDF 2174 KB)
- Tuning in Amplifiers (PDF 44 KB)
- Op Amp Performance Analysis (PDF 76 KB)
- An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
- Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
- Operational Amplifier Macromodels: A Comparison (PDF 59 KB)
