The TLE207x series of JFET-input operational amplifiers more than double the bandwidth and triple the slew rate of the TL07x and TL08x families of BiFET operational amplifiers. Texas Instruments Excalibur process yields a typical noise floor of 11.6 nV/Hz, 17-nV/Hz ensured maximum, offering immediate improvement in noise-sensitive circuits designed using the TL07x. The TLE207x also has wider supply voltage rails, increasing the dynamic signal range for BiFET circuits to ±19 V. On-chip zener trimming of offset voltage yields precision grades for greater accuracy in dc-coupled applications. The TLE207x are pin-compatible with lower performance BiFET operational amplifiers for ease in improving performance in existing designs.
TLE2072-Q1 | |
Number of Channels | 2 |
Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) | 4.5 |
Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) | 38 |
Iq per channel(Max)(mA) | 1.8 |
GBW(Typ)(MHz) | 9.4 |
Slew Rate(Typ)(V/us) | 35 |
VIO (25 deg C)(Max)(mV) | 6 |
Offset Drift(Typ)(uV/C) | 2.4 |
IIB(Max)(pA) | 175 |
CMRR(Min)(dB) | 70 |
Vn at 1kHz(Typ)(nV/rtHz) | 11.6 |
Rating | Automotive |
Pin/Package | 8SOIC |
Operating Temperature Range(C) | -40 to 125 |
Approx. Price (US$) | 1.15 | 1ku |
器件 | 状态 | 温度 | 价格(美元) | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
TLE2072QDRG4Q1 | ACTIVE | -40 to 125 | 1.15 | 1ku | SOIC (D) | 8 | 2500 | |
TLE2072QDRQ1 | ACTIVE | -40 to 125 | 1.15 | 1ku | SOIC (D) | 8 | 2500 |
器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
TLE2072QDRG4Q1 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLE2072QDRG4Q1 | TLE2072QDRG4Q1 |
TLE2072QDRQ1 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLE2072QDRQ1 | TLE2072QDRQ1 |