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TLE2082 双路高速 JFET 输入运算放大器

The TLE208x series of JFET-input operational amplifiers more than double the bandwidth and triple the slew rate of the TL07x and TL08x families of BiFET operational amplifiers. The TLE208x also have wider supply-voltage rails, increasing the dynamic-signal range for BiFET circuits to ±19 V. On-chip zener trimming of offset voltage yields precision grades for greater accuracy in dc-coupled applications. The TLE208x are pin-compatible with lower performance BiFET operational amplifiers for ease in improving performance in existing designs.

BiFET operational amplifiers offer the inherently higher input impedance of the JFET-input transistors, without sacrificing the output drive associated with bipolar amplifiers



	TLE2082
Number of Channels	2
Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10)	4.5
Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10)	38
Iq per channel(Max)(mA)	1.8
GBW(Typ)(MHz)	9.4
Slew Rate(Typ)(V/us)	35
VIO (25 deg C)(Max)(mV)	6
Offset Drift(Typ)(uV/C)	2.3
IIB(Max)(pA)	175
CMRR(Min)(dB)	70
Vn at 1kHz(Typ)(nV/rtHz)	11.6
Rating	Catalog
Pin/Package	8PDIP, 8SOIC
Operating Temperature Range(C)
Approx. Price (US$)	0.90 | 1ku

TLE2082 特性

• Direct Upgrades to TL05x, TL07x, and TL08x BiFET Operational Amplifiers
• Greater Than 2× Bandwidth (10 MHz) and 3× Slew Rate (45 V/us) Than TL08x
• On-Chip Offset Voltage Trimming for Improved DC Performance
• Wider Supply Rails Increase Dynamic Signal Range to ±19 V

TLE2082 芯片订购指南

器件	状态	温度	价格（美元）	封装 | 引脚	封装数量 | 封装载体	丝印标记
TLE2082CD	ACTIVE	0 to 70	0.70 | 1ku	SOIC (D) | 8	75 | TUBE
TLE2082CDG4	ACTIVE	0 to 70	0.70 | 1ku	SOIC (D) | 8	75 | TUBE
TLE2082CDR	ACTIVE	0 to 70	0.55 | 1ku	SOIC (D) | 8	2500 | LARGE T&R
TLE2082CDRG4	ACTIVE	0 to 70	0.55 | 1ku	SOIC (D) | 8	2500 | LARGE T&R
TLE2082CP	ACTIVE	0 to 70	0.55 | 1ku	PDIP (P) | 8	50 | TUBE
TLE2082CPE4	ACTIVE	0 to 70	0.55 | 1ku	PDIP (P) | 8	50 | TUBE
TLE2082ID	ACTIVE	-40 to 85	0.75 | 1ku	SOIC (D) | 8	75 | TUBE
TLE2082IDG4	ACTIVE	-40 to 85	0.75 | 1ku	SOIC (D) | 8	75 | TUBE
TLE2082IDR	ACTIVE		0.65 | 1ku	SOIC (D) | 8	2500 | LARGE T&R
TLE2082IDRG4	ACTIVE		0.65 | 1ku	SOIC (D) | 8	2500 | LARGE T&R
TLE2082IP	ACTIVE		0.65 | 1ku	PDIP (P) | 8	50 | TUBE
TLE2082IPE4	ACTIVE		0.65 | 1ku	PDIP (P) | 8	50 | TUBE

TLE2082 质量与无铅数据

器件	环保计划*	铅/焊球涂层	MSL 等级/回流焊峰	环保信息与无铅 (Pb-free)	DPPM / MTBF / FIT 率
TLE2082CD	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	TLE2082CD	TLE2082CD
TLE2082CDG4	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	TLE2082CDG4	TLE2082CDG4
TLE2082CDR	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	TLE2082CDR	TLE2082CDR
TLE2082CDRG4	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	TLE2082CDRG4	TLE2082CDRG4
TLE2082CP	Pb-Free (RoHS)	CU NIPDAU	N/A for Pkg Type	TLE2082CP	TLE2082CP
TLE2082CPE4	Pb-Free (RoHS)	CU NIPDAU	N/A for Pkg Type	TLE2082CPE4	TLE2082CPE4
TLE2082ID	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	TLE2082ID	TLE2082ID
TLE2082IDG4	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	TLE2082IDG4	TLE2082IDG4
TLE2082IDR	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	TLE2082IDR	TLE2082IDR
TLE2082IDRG4	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	TLE2082IDRG4	TLE2082IDRG4
TLE2082IP	Pb-Free (RoHS)	CU NIPDAU	N/A for Pkg Type	TLE2082IP	TLE2082IP
TLE2082IPE4	Pb-Free (RoHS)	CU NIPDAU	N/A for Pkg Type	TLE2082IPE4	TLE2082IPE4

TLE2082 应用技术支持与电子电路设计开发资源下载

1. TLE2082 数据资料 dataSheet 下载.PDF
2. TI 德州仪器仪运算放大器 (Op Amp)产品选型与价格 . xls
3. 所选封装材料的热学和电学性质 (PDF 645 KB)
4. 高速数据转换 (PDF 1967 KB)
5. 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
6. PowerPAD™ Thermally Enhanced Package (slma002g.HTM, 8 KB)
7. 运算放大器的单电源操作 (PDF 2174 KB)
8. Tuning in Amplifiers (PDF 44 KB)
9. Op Amp Performance Analysis (PDF 76 KB)
10. An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
11. Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
12. Operational Amplifier Macromodels: A Comparison (PDF 59 KB)