TLV341 具有关断状态的低压轨至轨输出 CMOS 运算放大器
The TLV341, TLV342, and TLV344 are single, dual, and quad CMOS operational amplifiers, respectively, with low-voltage, low-power, and rail-to-rail output swing capabilities. The PMOS input stage offers an ultra-low input bias current of 1 pA (typ) and an offset voltage of 0.3 mV (typ). For applications requiring excellent dc precision, the A grade (TLV34xA) has a low offset voltage of 1.25 mV (max) at 25°C.
These single-supply amplifiers are designed specifically for ultra-low-voltage (1.5-V to 5-V) operation, with a common-mode input voltage range that typically extends from –0.2 V to 0.5 V from the positive supply rail. Additional features include 20-nV/
Hz voltage noise at 10 kHz, 2.3-MHz unity-gain bandwidth, and 0
|
TLV341 |
| Iq per channel(Max)(mA) |
0.15 |
| VIO (25 deg C)(Max)(mV) |
4 |
| CMRR(Min)(dB) |
50 |
| Vn at 1kHz(Typ)(nV/rtHz) |
33 |
| Rail-Rail |
Out |
| IIB(Max)(pA) |
3000 |
| Slew Rate(Typ)(V/us) |
0.9 |
| GBW(Typ)(MHz) |
2.3 |
| Spec'd at Vs(V) |
1.8 |
| VIO (Full Range)(Max)(mV) |
4.5 |
| Vs(Min)(V) |
1.5 |
| Vs(Max)(V) |
5.5 |
| Pin/Package |
6SC70, 6SOT, 6SOT-23 |
| Vio(Max)(mV) |
4.5 |
| Supply Voltage 5(V) |
Yes |
| Open Loop Gain(Min)(dB) |
55 |
| Offset Drift(Typ)(uV/C) |
1.9 |
| IQ Per Amp (+/-)(Max)(mA) |
0.15 |
| Offset Voltage (+/-)(Max)(mV) |
4.5 |
| Number of Channels |
1 |
| Approx. Price (US$) |
0.38 | 1ku |
| Operating Temperature Range(C) |
-40 to 125 |
| Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) |
1.5 |
| Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) |
5.5 |
TLV341 特性
- 1.8-V and 5-V Performance
- Low Offset (A Grade)
- 1.25 mV Max (25°C)
- 1.7 mV Max (-40°C to 125°C)
- Rail-to-Rail Output Swing
- Wide Common-Mode Input Voltage Range . . . –0.2 V to (V+ – 0.5 V)
- Input Bias Current . . . 1 pA (Typ)
- Input Offset Voltage . . . 0.3 mV (Typ)
- Low Supply Current . . . 70 µA/Channel
- Low Shutdown Current . . .10 pA (Typ) Per Channel
- Gain Bandwidth . . . 2.3 MHz (Typ)
- Slew Rate . . . 0.9 V/µs (Typ)
- Turn-On Time From Shutdown . . . 5 µs (Typ)
- Input Referred Voltage Noise (at 10 kHz) . . . 20 nV/Hz
- ESD Protection Exceeds JESD 22
- 2000-V Human-Body Model (A114-A)
- 200-V Machine Model (A115-A)
- Applications
- Cordless/Cellular Phones
- Consumer Electronics (Laptops, PDAs)
TLV341 芯片订购指南
| 器件 |
状态 |
温度 |
价格（美元） |
封装 | 引脚 |
封装数量 | 封装载体 |
丝印标记 |
| TLV341IDBVR |
ACTIVE |
-40 to 125 |
0.38 | 1ku |
SOT-23 (DBV) | 6 |
3000 | LARGE T&R |
|
| TLV341IDBVRE4 |
ACTIVE |
-40 to 125 |
0.38 | 1ku |
SOT-23 (DBV) | 6 |
3000 | LARGE T&R |
|
| TLV341IDBVRG4 |
ACTIVE |
-40 to 125 |
0.38 | 1ku |
SOT-23 (DBV) | 6 |
3000 | LARGE T&R |
|
| TLV341IDBVT |
ACTIVE |
-40 to 125 |
0.60 | 1ku |
SOT-23 (DBV) | 6 |
250 | SMALL T&R |
|
| TLV341IDBVTE4 |
ACTIVE |
-40 to 125 |
0.60 | 1ku |
SOT-23 (DBV) | 6 |
250 | SMALL T&R |
|
| TLV341IDBVTG4 |
ACTIVE |
-40 to 125 |
0.60 | 1ku |
SOT-23 (DBV) | 6 |
250 | SMALL T&R |
|
| TLV341IDCKR |
ACTIVE |
-40 to 125 |
0.38 | 1ku |
SC70 (DCK) | 6 |
3000 | LARGE T&R |
|
| TLV341IDCKRE4 |
ACTIVE |
-40 to 125 |
0.38 | 1ku |
SC70 (DCK) | 6 |
3000 | LARGE T&R |
|
| TLV341IDCKRG4 |
ACTIVE |
-40 to 125 |
0.38 | 1ku |
SC70 (DCK) | 6 |
3000 | LARGE T&R |
|
| TLV341IDCKT |
ACTIVE |
-40 to 125 |
0.60 | 1ku |
SC70 (DCK) | 6 |
250 | SMALL T&R |
|
| TLV341IDCKTE4 |
ACTIVE |
-40 to 125 |
0.60 | 1ku |
SC70 (DCK) | 6 |
250 | SMALL T&R |
|
| TLV341IDCKTG4 |
ACTIVE |
-40 to 125 |
0.60 | 1ku |
SC70 (DCK) | 6 |
250 | SMALL T&R |
|
| TLV341IDRLR |
ACTIVE |
-40 to 125 |
0.38 | 1ku |
SOT (DRL) | 6 |
4000 | LARGE T&R |
|
| TLV341IDRLRG4 |
ACTIVE |
-40 to 125 |
0.38 | 1ku |
SOT (DRL) | 6 |
4000 | LARGE T&R |
|
TLV341 质量与无铅数据
| 器件 |
环保计划* |
铅/焊球涂层 |
MSL 等级/回流焊峰 |
环保信息与无铅 (Pb-free) |
DPPM / MTBF / FIT 率 |
| TLV341IDBVR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLV341IDBVR |
TLV341IDBVR |
| TLV341IDBVRE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLV341IDBVRE4 |
TLV341IDBVRE4 |
| TLV341IDBVRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLV341IDBVRG4 |
TLV341IDBVRG4 |
| TLV341IDBVT |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLV341IDBVT |
TLV341IDBVT |
| TLV341IDBVTE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLV341IDBVTE4 |
TLV341IDBVTE4 |
| TLV341IDBVTG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLV341IDBVTG4 |
TLV341IDBVTG4 |
| TLV341IDCKR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLV341IDCKR |
TLV341IDCKR |
| TLV341IDCKRE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLV341IDCKRE4 |
TLV341IDCKRE4 |
| TLV341IDCKRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLV341IDCKRG4 |
TLV341IDCKRG4 |
| TLV341IDCKT |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLV341IDCKT |
TLV341IDCKT |
| TLV341IDCKTE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLV341IDCKTE4 |
TLV341IDCKTE4 |
| TLV341IDCKTG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLV341IDCKTG4 |
TLV341IDCKTG4 |
| TLV341IDRLR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLV341IDRLR |
TLV341IDRLR |
| TLV341IDRLRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLV341IDRLRG4 |
TLV341IDRLRG4 |
TLV341 应用技术支持与电子电路设计开发资源下载
- TLV341 数据资料 dataSheet 下载.PDF
- TI 德州仪标准线性放大器产品选型与价格 . xls
- 所选封装材料的热学和电学性质 (PDF 645 KB)
- 高速数据转换 (PDF 1967 KB)
- 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
- PowerPAD™ Thermally Enhanced Package (slma002g.HTM, 8 KB)
- 运算放大器的单电源操作 (PDF 2174 KB)
- Tuning in Amplifiers (PDF 44 KB)
- Op Amp Performance Analysis (PDF 76 KB)
- An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
- Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
- Operational Amplifier Macromodels: A Comparison (PDF 59 KB)
