AFT20P060-4N: 1805-2170 MHz 6.3 W平均值,28 V Airfast LDMOS射频功率晶体管

特性
  • 增大负栅源电压范围,改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 为Doherty应用进行了优化
  • 符合RoHS规范
  • 采用盘卷包装。R3后缀 = 250个,32 mm卷盘宽度,13英寸卷带。
OM-780-4L, OM-780G-4L Package Image
数据手册 (1)
名称/描述Modified Date
AFT20P060-4NR3, AFT20P060-4GNR3 1805-2170 MHz, 6.3 W AVG., 28 V Airfast® RF Power LDMOS Transistors -... (REV 1) PDF (565.9 kB) AFT20P060-4N [English]01 Dec 2013
应用说明 (3)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]12 Mar 2009
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins (REV B) PDF (69.8 kB) 98ASA10833D [English]22 Mar 2016
98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins (REV E) PDF (76.8 kB) 98ASA10834D [English]22 Mar 2016
印刷电路板
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
AFT20P060-4NR3Active180521702847.8606.3 @ AVGW-CDMA18.9 @ 2170200.56I/OABLDMOS
AFT20P060-4GNR3Active180521702847.8606.3 @ AVGW-CDMA18.9 @ 2170200.56I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
OM780-4 straight Cu98ASA10833DMPQ - 250 REELPOQ - 250 REELActiveAFT20P060-4NR3AFT20P060-4NR3.pdf3260
OM780-4 Gull Cu98ASA10834DMPQ - 250 REELPOQ - 250 REELActiveAFT20P060-4GNR3AFT20P060-4GNR3.pdf3260
AFT20P060-4NR3, AFT20P060-4GNR3 1805-2170 MHz, 6.3 W AVG., 28 V Airfast® RF Power LDMOS Transistors -... AFT20P060-4N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
AFT20P060-4N PCB DXF file AFT20P060-4N
98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins MMRF1020-04N
AFT20P060-4NR3.pdf AFT20P060-4N
98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins MMRF1020-04N
AFT20P060-4GNR3.pdf AFT20P060-4N